دیتاشیت 2N5886G
مشخصات دیتاشیت
| نام دیتاشیت |
2N5883-5886
|
| حجم فایل |
96.931
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tray
-
Part Status:
Active
-
Transistor Type:
NPN
-
Current - Collector (Ic) (Max):
25A
-
Voltage - Collector Emitter Breakdown (Max):
80V
-
Vce Saturation (Max) @ Ib, Ic:
4V @ 6.25A, 25A
-
Current - Collector Cutoff (Max):
2mA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10A, 4V
-
Power - Max:
200W
-
Frequency - Transition:
4MHz
-
Operating Temperature:
-65°C ~ 200°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-204AA, TO-3
-
Supplier Device Package:
TO-204 (TO-3)
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Base Part Number:
2N5886
-
detail:
Bipolar (BJT) Transistor NPN 80V 25A 4MHz 200W Through Hole TO-204 (TO-3)
